unisonic technologies co., ltd ut2306 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r502-130.d n-channel enhancement mode ? description the utc ut2306 is n-channel power mosfet, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. used in commercial and industrial surface mount applications and suited for low voltage applications such as dc/dc converters. ? symbol 2.gate 1.source 3.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ut2306l-ae2-r UT2306G-AE2-R sot-23-3 s g d tape reel ut2306l-ae3-r ut2306g-ae3-r sot-23 s g d tape reel ? marking 23f l: lead free g: halogen free
ut2306 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-130.d ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 8 v continuous drain current i d 3.5 a pulsed drain current (note 1, 2) i dm 14 a power dissipation p d 0.83 w junction temperature t j +150 storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 150 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 30 v drain-source leakage current i dss v ds =24v, v gs =0v 1 a gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250 a 1 1.5 2 v drain-source on-state resistance (note 2) r ds(on) v gs =10v, i d =3.5a 42 65 m ? v gs =5v, i d =2.8a 70 90 dynamic characteristics input capacitance c iss v ds =25v,v gs =0v, f=1.0mhz 400 pf output capacitance c oss 80 pf reverse transfer capacitance c rss 45 pf switching characteristics turn-on delay time t d ( on ) v dd =15v, v gs =10v, i d =1a, r g =6 ? , r l =15 ? 10 19 ns turn-on rise time t r 8 15 ns turn-off delay time t d ( off ) 19 35 ns turn-off fall time t f 6.2 12 ns total gate charge q g v ds =15v, v gs =10v, i d =3.5a 12.5 16 nc gate-source charge q gs 2.4 nc gate-drain charge q gd 1.3 nc source-drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd v gs =0v, i s =1.25a 0.8 1.3 v maximum continuous drain-source diode forward current i s 1.3 a note:1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on fr4 board tQ 10sec.
ut2306 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-130.d ? typical characteristics drain current,i d (a) drain current,i d (a) v gs =10v v gs =5v 0246810 0 20 40 60 80 100 120 drain current,i d (a) on-resistance,r ds(on ) (m ) drain-source on resistance i ds =250 a gate threshold voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 junction temperature,t j ( ) normalized threshold voltage t j =25 t j =150 20 10 1 0.0 0.4 0.8 1.2 1.6 2.0 source-drain voltage,v sd (v) source current,i s (a) source-drain diode forward v gs =10v i ds =3.5a 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 150 125 100 r on @t j =25 :42m junction temperature,t j ( ) drain-source on resistance normalized on resistance
ut2306 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-130.d ? typical characteristics(cont.) power,p tot (w) drain current,i d (a) v ds =15v i d =3.5a gate charge 10 8 6 4 2 0 02468101214 gate charge,q g (nc) c iss c oss c rss frequency=1mh z 600 500 400 300 200 100 0 0 5 10 15 20 25 30 capacitance drain-source voltage,v ds (v) t a =25 dc 100ms 1s 10ms 1ms 300 s r ds (on ) l imit 50 10 1 0.1 0.01 0.01 0.1 1 10 100 drain-source voltage,v ds (v) safe operation area 100 10 1 0.1 0.01 1e-3 1e-4 1e-3 0.01 0.1 1 2 thermal transient impedance square wave pulse duration (sec) duty=0.5 0.2 0.1 0.05 0.01 0.02 single pulse mounted on 1in 2 pad r ja : 150 /w
ut2306 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-130.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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